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APM4220K
N-Channel Enhancement Mode MOSFET
Features
* * * * * *
25V/12A, RDS(ON)=7.5m(typ.) @ VGS=10V RDS(ON)=10m(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant)
Pin Description
D D D D
S S S G
Top View of SOP - 8
( 5,6,7,8 ) DD DD
Applications
*
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
SS S (1, 2, 3) (4) G
N-Channel MOSFET
Ordering and Marking Information
APM 4220 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Dev ice Blank : Original Dev ice XXXXX - Date Code
APM 4220 K :
APM 4220 XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw
APM4220K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA*
Note: *Surface Mounted on 1in pad area, t 10sec.
2
(TA = 25C unless otherwise noted)
Rating 25 20 VGS=10V 12 50 3 150 -55 to 150 TA=25C TA=100C 2 0.8 62.5 W C/W A C V A Unit
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300s Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol Parameter
(TA = 25C unless otherwise noted)
APM4220K Min. Typ. Max.
Test Condition
Unit
Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed
ID=15A, VDD=15V 25
50
mJ
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250A VDS=20V, VGS=0V IDSS VGS(th) IGSS RDS(ON) VSD
a a
V 1 A V nA m V
Zero Gate Voltage Drain Current
VDS=20V, VGS=0V TJ=25C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=12A VGS=4.5V, IDS=8A ISD=16A, VGS=0V 7.5 10 0.8 1.3 1.8
30 2.5 100 9
Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b
12
1.3
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd
39.6 VDS=10V, VGS=4.5V, IDS=12A 4.8 8.4
2
53 nC
Gate-Source Charge Gate-Drain Charge
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25C unless otherwise noted)
Test Condition
APM4220K Min. Typ. Max.
Unit
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf
Notes:
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz
2.4 1785 490 300 10 19 13 95 46
pF
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6
7 69 32
ns
a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Typical Characteristics
Power Dissipation
2.5 15
Drain Current
2.0
12
Ptot - Power (W)
1.5
ID - Drain Current (A)
9
1.0
6
0.5
o
3
o
0.0
TA=25 C 0 20 40 60 80 100 120 140 160
0
TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (C)
Tj - Junction Temperature (C)
Safe Operation Area
Normalized Transient Thermal Resistance
100
2 1
Thermal Transient Impedance
im
it
ID - Drain Current (A)
Rd
10
s(
on )L
300s 1ms
Duty = 0.5 0.2 0.1 0.05 0.02 0.01
10ms
0.1
1
100ms 1s
0.01
Single Pulse
0.1
DC
0.01 0.01
TA=25 C 0.1 1 10 100
O
1E-3 1E-4
Mounted on 1in pad o RJA : 62.5 C/W
2
1E-3
0.01
0.1
1
10 30
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Typical Characteristics (Cont.)
Output Characteristics
50 VGS=4,5,6,7,8,9,10V 40 20
Drain-Source On Resistance
RDS(ON) - On - Resistance (m)
3V
16
ID - Drain Current (A)
30
12
VGS=4.5V
20 2.5V 10
8
VGS=10V
4
0
0
2
4
6
8
10
0
0
10
20
30
40
50
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
50
1.6
Gate Threshold Voltage
IDS =250A 1.4
40
Normalized Threshold Voltage
ID - Drain Current (A)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25
30 Tj=125 C 20
o
10
Tj=25 C
o
Tj=-55 C
o
0
0
1
2
3
4
5
0
25
50
75
100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (C)
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.00 VGS = 10V 1.75 IDS = 12A 10 Tj=150 C Tj=25 C
o o
Source-Drain Diode Forward
50
Normalized On Resistance
1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 RON@Tj=25 C: 7.5m 0 25 50 75 100 125 150
o
IS - Source Current (A)
1
0.1 0.0
0.2 0.4
0.6
0.8
1.0
1.2 1.4
1.6
Tj - Junction Temperature (C)
VSD - Source - Drain Voltage (V)
Capacitance
3000 Frequency=1MHz 2500
10 VDS=10V 9 I = 12A D
Gate Charge
VGS - Gate-source Voltage (V)
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40
C - Capacitance (pF)
2000 Ciss 1500
1000 Coss Crss 0
500
0
5
10
15
20
25
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Avalanche Test Circuit and Waveforms
V DS L DUT IA S RG V DD tp
V D SX(SU S) V DS
V DD
tp
IL 0.0 1 tAV
EA S
Switching Time Test Circuit and Waveforms
V DS RD DUT V RG V DD
10%
tp
V DS
90%
GS
V GS t d (on) t r t d (off) t f
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
TP
(IR/Convection or VPR Reflow)
tp C ritical Zone T L to T P
R am p-up
T e m p e ra tu re
TL T sm ax
tL
T sm in R am p-down ts Preheat
25
t 25 C to Peak
T im e
Classification Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds
6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 9 www.anpec.com.tw
APM4220K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level.
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1
Ko
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4220K
Carrier Tape & Reel Dimensions(Cont.)
T2
J C A B
T1
Application
A 3301
B 62 1.5
C 12.75 + 0.1 5
J 2 + 0.5
T1 12.4 +0.2
T2 2 0.2 Ao 6.4 0.1
W 12 + 0.3 - 0.1 Bo 5.2 0.1
P 8 0.1
E 1.75 0.1
SOP-8
F D D1 Po P1 5.5 0.1 1.550.1 1.55+ 0.25 4.0 0.1 2.0 0.1
Ko t 2.1 0.1 0.30.013
(mm)
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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